India's First Advanced 3D Semiconductor Packaging Facility Breaks Ground in Odisha
US-based 3D Glass Solutions (3DGS) broke ground in Bhubaneswar, Odisha on India's first heterogeneous integration packaging facility — targeting AI, HPC, defence, and 5G chips using glass substrates.
The facility is being set up by Heterogeneous Integration Packaging Solutions Pvt. Ltd., the Indian subsidiary of US-based 3D Glass Solutions. An FSA was signed with ISM before the groundbreaking. Unlike conventional OSAT which uses imported organic substrates, glass substrates offer better thermal management, higher interconnect density, and improved reliability — making them the substrate of choice for AI accelerators, HPC chips, and defence-grade hardware.
Odisha is simultaneously building advanced packaging capability (3DGS) and conventional OSAT volume (Sancode Semi, ₹1,650 crore). More than ₹10,000 crore has been committed to semiconductor and electronics manufacturing in the state. Intel, Samsung, and TSMC all have active glass substrate development roadmaps — India is entering this space earlier than most assumed possible.
This is the signal that India's semiconductor strategy is not purely assembly-led. Heterogeneous integration is where the next decade of semiconductor value creation happens — chiplets, 2.5D stacking, 3D integration. Institutions designing OSAT programmes in 2026 should be aware that the long-term talent demand is not only wire bonder operators, but engineers who understand advanced packaging architectures, substrate materials, and thermal management. The NITI Aayog 2035 roadmap names exactly these capabilities as India's strategic priority. The Odisha facility is the first physical proof of that intent.